| 摘要 |
PURPOSE: A method for measuring the temperature of a vacuum chamber in order to manufacture a semiconductor device is provided to reduce a time for measuring a temperature in the chamber by measuring the temperatures using the change property of the specific resistance of silicide. CONSTITUTION: A metal layer is deposited on a silicon layer in order to manufacture a sample wafer. Based on the temperature of a vacuum chamber, the specific resistance change of the sample wafer is displayed on a graph. The deposition thickness is adjusted in order to manufacture a wafer with a different specific resistance. A relation for displaying the ratio of specific resistance after a heating process is performed. Based on the comparison result between an initial specific resistance and the specific resistance, the temperature of the vacuum chamber is estimated.
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