| 摘要 |
<p>A semi-conductor device (see Division H1) includes a contact disc consisting of an alloy formed by sintering a mixture of finely divided powders, the powder mixture consisting of from 0.5-5.0% silver, from 0.0-0.4% silicon, and the balance being molybdenum apart from minor amounts of unwanted impurities. The disc is made by compacting the well blended powders at a pressure of 20-80 tons per square inch in an inert atmosphere such as argon. (In the case of mixtures containing no silicon the molybdenum and silver powders are run at high temperature through dry hydrogen before compaction). The green compact is sintered at a temperature of from 1550-1700 DEG C. for from 1-4 hours in a dry hydrogen atmosphere (Dew Point -20 to -60 DEG C.). The sintered contents are removed to a cooling chamber and allowed to cool to room temperature in an atmosphere of dry hydrogen. An electrode contact disc is attached to the silicon body of the semi-conductor device by soldering. Specification 832,067 is referred to.</p> |
