| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve precision in overlapping a pattern to be formed on an object by correcting the distortion of a projection image. <P>SOLUTION: A main controller 50 drives a lens element 27 or finely corrects the synchronous driving of stages RST, WST in response to the correction of a distortion in the projection image of a pattern of a reticle R, which is described by a correction function, in scanning exposure with respect to the current process layer of a wafer W, and then, allows the distortion of the projection image to coincide with the distortion of the pattern of an original process layer. In this case, the candidate of a value, which exceeds a threshold to be fixed in response to the limit of a function of correcting the distortion of the projection image in an exposure apparatus, among the candidates of the value to be substituted into a coefficient in the correction function is changed into the value being equal to or less than the threshold. Then, in order to cancel the change, the candidate of another value, which does not exceed the threshold, is changed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
