| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film for a multilayer resist process, which is excellent in storage stability and achieves formation of a silicon-containing film excellent in adhesion to a resist film and in reproducibility of a resist pattern, having adequate resistance to a developer used for development, and also having adequate masking property to oxygen ashing in resist removal (etching resistance). <P>SOLUTION: The composition comprises a polysiloxane derived from 30-80 pts.mass of a compound (a1) of formula (1), 5-60 pts.mass of a compound (a2) of formula (2), and 5-50 pts.mass of at least one of a compound (a3) of formula (3) and a compound (a4) of formula (4), provided that the sum total of the compounds (a1) to (a4) is 100 pts.mass; and a solvent. <P>COPYRIGHT: (C)2010,JPO&INPIT |
