| 摘要 |
PROBLEM TO BE SOLVED: To make infrared light absorption of electrode layers of a photodetector small. SOLUTION: In the semiconductor photodetector which has a first electrode layer 2, a light absorption layer 3 for infrared light, and a second electrode layer 4 and detects infrared light 9 made incident from below, at least one of the first and second electrode layers 2 and 4 has a semiconductor superlattice in which at least one of a barrier layer 22 and a well layer 21 is impurity-doped, and transition energy between sub-bands that the semiconductor superlattice forms is made larger than photon energy of the infrared light. Transition between the sub-bands by the infrared light 9 is inhibited and the conductive electron density of the electrode layers is low, so the infrared light absorption is small. COPYRIGHT: (C)2010,JPO&INPIT
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