发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
In a semiconductor substrate of a first conductivity type, first to third drain offset regions of a second conductivity type are formed in that order in a bottom up manner. A body region of the first conductivity type is formed partly in the second drain offset region and partly in the third drain offset region. The second drain offset region has a lower impurity concentration than the first and third drain offset regions. A curvature portion of the body region is located in the second drain offset region.
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申请公布号 |
US2010123194(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20090613150 |
申请日期 |
2009.11.05 |
申请人 |
MIYAGAWA KOHEI;KOBAYASHI YASUSHI;YAMASHINA DAIGO |
发明人 |
MIYAGAWA KOHEI;KOBAYASHI YASUSHI;YAMASHINA DAIGO |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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