| 摘要 |
The present invention provides a thin film transistor realizing improved reliability by suppressing deterioration in electric characteristics. The thin film transistor includes an oxide semiconductor film forming a channel; a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film; and a pair of electrodes formed as a source electrode and a drain electrode in contact with the oxide semiconductor film and obtained by stacking at least first and second metal layers in order from the side of the oxide semiconductor film The first metal layer is made of a metal having ionization energy equal to or higher than molybdenum (Mo), a metal having oxygen barrier property, or a nitride or a silicon nitride of the metal having oxygen barrier property.
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