发明名称 SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
摘要 A semiconductor component that includes an edge termination structure and a method of manufacturing the semiconductor component. A semiconductor material has a semiconductor device region and an edge termination region. One or more device trenches may be formed in the semiconductor device region and one or more termination trenches is formed in the edge termination region. A source electrode is formed in a portion of a termination trench adjacent its floor and a floating electrode termination structure is formed in the portion of the termination trench adjacent its mouth. A second termination trench may be formed in the edge termination region and a non-floating electrode may be formed in the second termination trench. Alternatively, the second termination trench may be omitted and a trench-less non-floating electrode may be formed in the edge termination region.
申请公布号 US2010123189(A1) 申请公布日期 2010.05.20
申请号 US20080271106 申请日期 2008.11.14
申请人 VENKATRAMAN PRASAD;HOSSAIN ZIA 发明人 VENKATRAMAN PRASAD;HOSSAIN ZIA
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
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