| 摘要 |
A reticle may include a transparent substrate, a first phase pattern having a first thickness disposed on the transparent substrate, a chrome pattern disposed on the first phase pattern, and a second phase pattern having a second thickness disposed on the transparent substrate. The first phase pattern and the chrome pattern may be disposed to overlap with each other. A method of forming a semiconductor device may include forming a gate insulating layer and a gate electrode on a semiconductor substrate, forming a spacer on a sidewall of the gate electrode, forming an interlayer insulating layer over an exposed surface of the semiconductor substrate, and forming a common contact hole. The contact hole may include a first portion exposing the gate electrode, a second portion exposing the semiconductor substrate, and a third portion connecting the first and second portions, by patterning the interlayer insulating layer.
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