| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: high density gallium oxide-zinc oxide sintered sputtering target for forming transparent electro-conductive film contains 20 mln-1 by weight or more of each of oxides of zirconium and oxide of aluminium, at that common contents are less than 250 mln-1, also value of volume resistance of target is 3.0 mOhm cy or less. Transparent electro-conductive film is formed on glass substrate by means of sputtering with implementation of gallium oxide-zinc oxide target. Film contains zirconium oxide and aluminium oxide, amount of each is 20 mln-1 by weight or more, while common contents are less, than 250 mln-1. Method of forming transparent electro-conductive film includes sputtering with implementation of gallium oxide-zinc oxide target. ^ EFFECT: production of transparent electro-conductive film capable to maintain preferable coefficient of transmission in optic region and electric conductivity. ^ 7 cl, 1 tbl, 10 ex |
