| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a silicon carbide single crystal, by which a high quality silicon carbide single crystal having low crystal defect density is grown with a satisfactory reproducibility. SOLUTION: The method for growing the silicon carbide single crystal includes an etching-treated surface-forming process for forming an etching-treated surface 4a by subjecting a crystal growth surface of a seed crystal 4 to an etching treatment; and a crystal growth process for growing the silicon carbide single crystal on the etching-treated surface 4a by a sublimation method. By the method, factors inhibiting crystal growth, such as dust or polishing scratch damage, are removed by performing the etching treatment before crystal growth, and lateral growth is accelerated to grow the high quality silicon carbide single crystal having few crystal defects. COPYRIGHT: (C)2010,JPO&INPIT
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