| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of manufacturing a highly reliable semiconductor device with high yield by bonding a bump more reliably. SOLUTION: A solder 24b is formed on a first substrate 11, and the solder 24b is irradiated with plasma PL in the atmospheric pressure. Following to irradiation with plasma PL, the first substrate 11 and a second substrate are bonded by the solder 24b. The plasma PL has a temperature beyond the melting point of the solder 24b. COPYRIGHT: (C)2010,JPO&INPIT
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