| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a semiconductor member made of a single-crystal semiconductor material and has excellent characteristics, and to provide a method of manufacturing the same. SOLUTION: An insulating film 12 is formed on a silicon substrate 11 made of single-crystal silicon, an opening 12a is formed in the insulating film 12, and an amorphous silicon film is formed on the insulating film 12 in contact with the silicon substrate 11 through the opening 12a, and subjected to solid-phase epitaxial growth starting at the silicon substrate 11 as a starting point, and then patterned. Consequently, a seed layer formed of single-crystal silicon is formed at a part of a region deviated from a region right above the opening 12a. An amorphous silicon film is deposited so as to cover the seed layer, and subjected to solid-phase epitaxial growth starting at the seed layer as a starting point to form a single-crystal silicon film. The single-crystal silicon film is patterned to form silicon pillars 33. COPYRIGHT: (C)2010,JPO&INPIT
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