| 摘要 |
An integrated circuit with stacked devices. One embodiment provides a surface of a first semiconductor structure of a first crystalline semiconductor material including first and second portions. First structures are formed on the first portions. The second portions remain uncovered. Sacrificial structures of a second, different crystalline material are formed on the second portions. A second semiconductor structure of the first crystalline semiconductor material is formed over the sacrificial structures and over the first structures.
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