发明名称 BARRIER SLURRY FOR LOW-K DIELECTRICS
摘要 The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
申请公布号 WO2010033156(A3) 申请公布日期 2010.05.20
申请号 WO2009US04973 申请日期 2009.09.03
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 LI, SHOUTIAN;GRUMBINE, STEVEN;DYSARD, JEFFREY;SINGH, PANKAJ
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
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