SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device includes a semiconductor layer including an active layer. The active layer includes: a gain region; an end face window region formed in a region of the active layer including an end face of the semiconductor layer, and having a larger band gap energy than the gain region; and a transition region formed between the gain region and the end face window region. The band gap energy of the transition region continuously changes from the band gap energy of the gain region to that of the end face window region. The gain region and a portion of the transition region located near the gain region form a current injection portion into which current is injected. The end face window region and a portion of the transition region located near the end face window region form a current non-injection portion into which current is prevented from being injected.