| 摘要 |
<p>PURPOSE: A TFT(Thin Film Transistor) and a method of manufacturing the same are provided to improve the thickness uniformity and prevent damage of the active layer, thereby to improve the electrical characteristic of TFT. CONSTITUTION: An active layer(324) is formed on a substrate as a crystalline silicon thin film. A etch stopper(350) is formed on the active layer as a insulating film. A ohmic contact layer(325n) is formed on a source/drain area of the active layer as amorphous silicon thin film. A source/drain electrode(322,323) is connected to the source/drain area through the ohmic contact layer and is not overlapped to the etch stopper.</p> |
