| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device for preventing leakage of a current through an intermediate contact layer separation groove as much as possible. <P>SOLUTION: The method of manufacturing the photoelectric conversion device includes a step of film-forming a top layer 91 whose main component is amorphous silicon, a step of film-forming an intermediate contact layer 93 to be connected electrically and optically on the top layer 91, a step of removing the intermediate contact layer 93 by radiating pulse laser and for separating the intermediate contact layer 93 by forming an intermediate contact layer separation groove 14 that reaches the top layer 91, and a step of film-forming a bottom layer 92 whose main component is microcrystal silicon and is connected electrically and optically, in the intermediate contact layer separation groove 14 as well as on the intermediate contact layer 93. The intermediate contact layer separation groove 14 terminates in an i layer of the top layer 91. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
