发明名称 Semiconductor integrated circuit devices and display apparatus including the same
摘要 A semiconductor integrated circuit device includes: an electrostatic discharge (ESD) impurity region formed in a substrate; a bump formed on the substrate; and a first wiring layer and a second wiring layer formed at the same level under the bump. The first and second wiring layers are separated from each other, and at least part of each of the first and second wiring layers are overlapped by the bump. The first wiring layer is electrically connected to the ESD impurity region and the bump, and the second wiring layer is insulated from the bump.
申请公布号 US2010123245(A1) 申请公布日期 2010.05.20
申请号 US20090591110 申请日期 2009.11.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE TAE-JUNG;BANG KEE-IN;PARK MYOUNG-KYU;UHM KYOUNG-EUN
分类号 H01L23/48 主分类号 H01L23/48
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