SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To adjust a gate interface by increasing a saturated charge amount Qs in a solid-state imaging device, and to suppress, for instance, the generation of a dark current or improve charge transfer by the adjustment of the gate interface. SOLUTION: The solid-state imaging device includes: a photodiode PD embedded in a semiconductor substrate 11 and acting as a photoelectric conversion element; a vertical transfer transistor Tr1 of which the channel direction is vertical to the semiconductor substrate 11; and an impurity ion implantation region 25 for gate interface adjusting formed around a transfer gate of the vertical transfer transistor Tr1. COPYRIGHT: (C)2010,JPO&INPIT