| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that suppresses effect to copper wirings or interlayer insulation films due to moisture in atmosphere during the semiconductor manufacturing process. Ž<P>SOLUTION: The manufacturing method for the semiconductor device includes: forming a metallic layer and an interlayer insulation film on a semiconductor substrate sequentially; etching on the interlayer insulation film using fluorine-based etching gas to form an opening portion of a predetermined pattern, reaching the metallic layer; and supplying chlorine-based silane gas onto the semiconductor substrate and discharging, thus forming a Si film at least on an internal surface of the opening portion without exposure to the atmosphere after the etching. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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