发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A nonvolatile memory device includes a memory cell that stores data by presence or absence of electrons accumulated in a floating gate, a read reference current generator that generates a read reference current for reading data from the memory cell based on a constant current from a constant current generator included therein, and a read voltage generator that generates a read voltage to be applied to a control gate of the memory cell during data reading. The read reference current generator generates a monitor voltage that varies according to variation of the read reference current and a threshold voltage of the memory cell. The read voltage generator generates the read voltage based on the monitor voltage.
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申请公布号 |
US2010124125(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20090619952 |
申请日期 |
2009.11.17 |
申请人 |
NEC ELECTRONICS CORPORATION;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
AMANAI MASAKAZU;KASHIMURA MASAHIKO;NAGAI YOSHIHIRO;TAKI MASATO;HONDA NORIHIRO;YAMANAKA KAZUSHI |
分类号 |
G11C16/06;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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