发明名称 DLL circuit and semiconductor device having the same
摘要 A DLL circuit includes a delay line that generates an internal clock signal by delaying an external clock signal CLK, a counter circuit that sets a delay amount of the delay line, a phase detecting circuit that generates a phase determination signal based on a phase of the external clock signal, and an antialiasing circuit that prohibits the counter circuit to update a count value based on the phase determination signal, in response to a fact that a jitter component included in the external clock signal is equal to or higher than a predetermined frequency. With this configuration, a problem that the internal clock signal is continuously controlled to a wrong direction due to malfunction of aliasing does not occur.
申请公布号 US2010123495(A1) 申请公布日期 2010.05.20
申请号 US20080292957 申请日期 2008.12.01
申请人 ELPIDA MEMORY, INC. 发明人 KOBAYASHI SHOTARO;KITAGAWA KATSUHIRO
分类号 H03L7/06 主分类号 H03L7/06
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