发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
申请公布号 US2010123515(A1) 申请公布日期 2010.05.20
申请号 US20090608105 申请日期 2009.10.29
申请人 RENESAS TECHNOLOGY CORP. 发明人 SASAKI TOSHIO;FUKUOKA KAZUKI;MORI RYO;YASU YOSHIHIKO
分类号 G05F1/10 主分类号 G05F1/10
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