| 摘要 |
<p>Disclosed is an ion implantation method, which can form in the plane of a substrate, without using the step rotation of a plate, a circular implantation region and an outer-circumference implantation region which encloses the circular implantation region and has a dosage different from that of the circular implantation region. The ion implantation method makes variable the scanning rate of an ion beam (4) in the plane of a substrate (2), so that the scanning rate distribution, as taken in an X-direction per one-way scan or reciprocal scans of the ion beam (4) in the plane of the substrate (2) is varied according to the position of the substrate (2) in a Y-direction, thereby to form in the face of the substrate the circular implantation region and an outer-circumference implantation region which encloses the circular implantation region and has the dosage different from that of the circular implantation region.</p> |
