| 摘要 |
The present invention relates to a high density flash memory cell device, a cell string and a fabrication method thereof. The memory cell device comprises: a semiconductor substrate, a first doped semiconductor region that is formed on the semiconductor substrate, a second doped semiconductor region that is formed on the first doped semiconductor region, and a tunneling insulation layer, a charge storage node, a control insulation layer and a control electrode that are sequentially formed on the second doped semiconductor region. The first and second doped semiconductor regions are doped in different types of semiconductors. The flash memory cell string is formed by arranging in a row the plural cell devices with the above-mentioned structure or comprises the arranged cell devices and a switching device for cell selection. The present invention is able to improve remarkably the miniaturization and performance of the cell device in a previous NOR or NAND flash memory. Different from a previous transistor cell device, the cell device according to the invention does not include a channel and a source/drain. Therefore, the fabrication process is simplified and problems such as cross-talk and read disturb can be solved easily compared with previous memory. |
