| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a nitrogen-containing zinc oxide film. Ž<P>SOLUTION: The method for producing a nitrogen-containing zinc oxide film includes: plasmatizing a mixed gas of nitrogen and oxygen into a reactive gas at non-equilibrium atmospheric pressure, mixing it with a vaporized organic zinc compound, and decomposing and depositing the organic zinc compound on a substrate. A zinc oxide thin film produced by the method can become a thin film which achieves p-type characteristic by containing nitrogen. Accordingly, a semiconductor product using the same may be applicable as a light-emitting element since zinc oxide is transparent. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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