| 摘要 |
<P>PROBLEM TO BE SOLVED: To overcome the problems in the prior art, in which a method is provided for suppressing a dark current from an I layer by adding a carbon, so as to enlarge a band gap, to a P layer or an N layer sandwiching the I layer of a silicon system PIN-PD in order to reduce the dark current of the silicon system PIN-PD, silicon carbide differs from silicon in a lattice constant about 25%, and a big stress is generated by adding the carbon in the silicon and a failure is caused by this stress and the dark current increases, and moreover, the dark current is restrictively suppressed by only lowering a leak from a side. Ž<P>SOLUTION: A texture structure is made by processing a first conductive layer 20 of a PIN-PD 10 using AlNd with etchant, and furthermore an AlNd oxide generated in this process is used as a lower barrier layer 21. In this case, an electric charge is transmitted by an FN current between a first semiconductor layer 22 and the first conductive layer 20. In a black state with little FN current, a differential resistance of the lower barrier layer 21 is high, and a pass of the dark current is prevented. In a white state, the differential resistance becomes low and a photocurrent is passed, thereby an SN ratio of an image increases. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
