DEPTH CALIBRATION SAMPLE FOR SECONDARY ION MASS SPECTROMETRY, PRODUCTION METHOD OF THE SAME AND SECONDARY ION MASS SPECTROMETRY

摘要

PROBLEM TO BE SOLVED: To provide a standard sample for depth calibration of secondary ion mass spectrometry which has an impurity concentration distribution in a shallow region like a transition region. SOLUTION: The standard sample is produced by steps of: forming an ion implantation layer 2 by ion-implanting In or Ga to a silicon substrate 1; and forming a redistribution layer 4 by accumulating ion-implanted In or Ga in a neighborhood of the surface of the silicon substrate 1 by irradiating the silicon substrate 1 with an oxygen ion 3. A standard sample having a known In or Ga concentration distribution is prepared according to the irradiation angle and irradiation energy of the oxygen ion 3. COPYRIGHT: (C)2010,JPO&INPIT