发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Provided are a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device may include first and second conductive lines separated from each other on a semiconductor substrate; a fuse line on the first and second conductive lines; a first conductive via between the fuse line and the first conductive line and a second conductive via between the fuse line and the second conductive line; and a dummy conductive via disposed between the first and second conductive vias, the dummy conductive via being connected to the fuse line so that a portion of the dummy conductive via is removed together with a portion of the fuse line when the fuse line is cut.
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申请公布号 |
US2010123212(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20090592024 |
申请日期 |
2009.11.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG JIN-HYUK;HWANG HONGKYU |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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