发明名称 Semiconductor device and method of manufacturing the same
摘要 Provided are a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device may include first and second conductive lines separated from each other on a semiconductor substrate; a fuse line on the first and second conductive lines; a first conductive via between the fuse line and the first conductive line and a second conductive via between the fuse line and the second conductive line; and a dummy conductive via disposed between the first and second conductive vias, the dummy conductive via being connected to the fuse line so that a portion of the dummy conductive via is removed together with a portion of the fuse line when the fuse line is cut.
申请公布号 US2010123212(A1) 申请公布日期 2010.05.20
申请号 US20090592024 申请日期 2009.11.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG JIN-HYUK;HWANG HONGKYU
分类号 H01L23/525 主分类号 H01L23/525
代理机构 代理人
主权项
地址