SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER

摘要

A trench contact suicide (78) is formed on an inner wall of a contact trench (63) that reaches to a buried conductive layer (30) in a semiconductor substrate (8) to reduce parasitic resistance of a reach through structure. The trench contact suicide (78) is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate (8). The trench (63) is subsequently filled with a middle-of-line (MOL) dielectric (92). A contact via (98) may be formed on the trench contact suicide (78). The trench contact suicide (78) may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.