发明名称 INDUCTIVELY COUPLED PLASMA APPARATUS WITH STRUCTURE HOLDING DIELECTRIC
摘要 PURPOSE: An inductively coupled plasma apparatus with a structure holding dielectric is provided to generate uniform plasma while supporting a dielectric more stably by processing a substrate to be processed through an inductively-coupled plasma. CONSTITUTION: A chamber(130) is divided into an antenna chamber and a substrate processing chamber by a dielectric. A gas supply unit supplies a processing gas to the substrate processing chamber. A discharging unit(150) exhausts the inside of the substrate processing chamber and maintains a reduced pressure state. A dielectric support structure(160) partitions the dielectric comprising the upper wall of a substrate process chamber into a plurality of partitions and maintains the inside of the substrate process chamber vacuum state. A high frequency antenna(170) is located in the antenna chamber and the top of the dielectric.
申请公布号 KR20100053249(A) 申请公布日期 2010.05.20
申请号 KR20080112282 申请日期 2008.11.12
申请人 SEMES CO., LTD. 发明人 OH, HYUN TAEK;LEE, CHANG HWAN;NOH, IL HO;KONG, BYUNG YUN;LEE, JEOUNG IN
分类号 H05H1/24;H05H1/30 主分类号 H05H1/24
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