发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING SHARED SENSE AMPLIFIERS |
摘要 |
PURPOSE: A semiconductor memory device is provided to reduce the number of signals outputted from a column decoder by selecting a plurality of bit lines in response to a bit line selection indication signal of a bit line selector. CONSTITUTION: A memory cell array(110) comprises a plurality of memory cells between a word line and a bit line. A column decoder(120) outputs a bit line selection indication signal in response to a column address. A bit line selector(130) selects, activates, and outputs the bit line selection signal in response to the bit line selection indication signal. One end of a switch is connected to a bit line. The other end is successively connected to a sensing line. A shared sense amplifier(140) comprises a sense amplifier sensing and amplifying data applied through the sensing line.
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申请公布号 |
KR20100052907(A) |
申请公布日期 |
2010.05.20 |
申请号 |
KR20080111797 |
申请日期 |
2008.11.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG, HOE JU;SONG, KIW HAN |
分类号 |
G11C7/06;G11C7/08;G11C7/12 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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