发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING SHARED SENSE AMPLIFIERS
摘要 PURPOSE: A semiconductor memory device is provided to reduce the number of signals outputted from a column decoder by selecting a plurality of bit lines in response to a bit line selection indication signal of a bit line selector. CONSTITUTION: A memory cell array(110) comprises a plurality of memory cells between a word line and a bit line. A column decoder(120) outputs a bit line selection indication signal in response to a column address. A bit line selector(130) selects, activates, and outputs the bit line selection signal in response to the bit line selection indication signal. One end of a switch is connected to a bit line. The other end is successively connected to a sensing line. A shared sense amplifier(140) comprises a sense amplifier sensing and amplifying data applied through the sensing line.
申请公布号 KR20100052907(A) 申请公布日期 2010.05.20
申请号 KR20080111797 申请日期 2008.11.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG, HOE JU;SONG, KIW HAN
分类号 G11C7/06;G11C7/08;G11C7/12 主分类号 G11C7/06
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