CAPACITANCE ADJUSTMENT CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREFOR

摘要

PURPOSE: A capacitance adjustment circuit for a semiconductor memory device and a method for manufacturing the same are provided to reduce the size of the semiconductor memory device by connecting or separating an input pad and a metal contact in order to adjust capacitance with respect to an input pin. CONSTITUTION: At least one capacitor(209) is formed on a semiconductor substrate(201). A contact hole(MnC) is formed to contact with the capacitor. An input pad(12) shields the contact hole. A conductive material fills the contact hole. The capacitor and the input pad is electrically connected or separated. A metal line is electrically connected to the contact hole.