| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to reduce the generation of defect in a photo diode region by etching bonding-silicon with a wet-etching method. CONSTITUTION: Bonding-silicon(120) including a first dopant region(121) and a second dopant region(122) is formed on a substrate(100). A first interlayer insulation layer is formed on the bonding-silicon. A first contact plug(160) is connected to a first metal wiring(101) by passing through the bonding-silicon. A second interlayer insulation layer is formed on the first interlayer insulation layer. A second contact plug(180) is connected to the first dopant region. A second metal wiring(190) is connected to the second contact plug. A color filter layer and a micro lens are formed on the second metal wiring.
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