发明名称 SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY APPARATUS
摘要 PURPOSE: A sense amp circuit is provided to secure an area margin of a sense amp circuit part by dividing and arranging a transistor for transferring data. CONSTITUTION: A sense amp part(C) senses and amplifies the electric potential difference of a bit line pair. A first data transmission part(A) is arranged in one side of the sense amp part based on the vertical direction of the extension direction of the bit line. The first data transmission part transfers a signal of one bit line of the bit line pair to the first data line by being connected to one of the bit line pair. A second data transmission part(B) is arranged in the other side of the sense amp part based on the vertical direction of the extension direction of the bit line. The second data transmission part transfers a signal of the rest bit line to the second data line by being connected to the rest bit line.
申请公布号 KR20100052606(A) 申请公布日期 2010.05.20
申请号 KR20080111406 申请日期 2008.11.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JONG SU
分类号 G11C11/4091;G11C11/4094 主分类号 G11C11/4091
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