| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve the image quality of a photo diode by forming a PIN diode with mono crystalline or polycrystalline in order to minimize a leakage current. CONSTITUTION: A first electrode(210), a first conductive layer(220), an intrinsic layer(230) and a second conductive layer(240) are formed on a wiring. An etching process is performed for the first electrode, a first conductive layer and the intrinsic layer and the second conductive layer in order to form a trench. Amorphous silicon of the first conductive layer, the intrinsic layer and the second conductive layer is converted to mono crystalline or polycrystalline by a laser annealing process.
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