发明名称 |
SUPERSTRONG SINGLE CRYSTALS OF CVD-DIAMOND AND THEIR THREE-DIMENSIONAL GROWTH |
摘要 |
FIELD: electricity. ^ SUBSTANCE: method includes placement of crystalline diamond nucleus in heat-absorbing holder made of substance having high melt temperature and high heat conductivity, in order to minimise temperature gradients in direction from edge to edge of diamond growth surface, control of diamond growth surface temperature so that temperature of growing diamond crystals is in the range of approximately 1050-1200C, growing of diamond single crystal with the help of chemical deposition induced by microwave plasma from gas phase onto surface of diamond growth in deposition chamber, in which atmosphere is characterised by ratio of nitrogen to methane of approximately 4% N2/CH4 and annealing of diamond single crystal so that annealed single crystal of diamond has strength of at least 30 MPa m1/2. ^ EFFECT: increased strength. ^ 26 cl, 4 dwg |
申请公布号 |
RU2389833(C2) |
申请公布日期 |
2010.05.20 |
申请号 |
RU20070113175 |
申请日期 |
2005.09.09 |
申请人 |
KARNEGI INSTIT'JUSHN OF VASHINGTON |
发明人 |
KHEMLI RASSELL DZH.;MAO KHO-KVANG;JAN' CHZHI-SHIJU |
分类号 |
A44C17/00;A61B17/32;C30B25/00;C30B29/04;C30B33/02;G02B1/02 |
主分类号 |
A44C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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