| 摘要 |
<p>A composite semiconductor device (10) as a switching device is provided with first and second main terminals (11, 12); a main control terminal (13); a first IGFET (14); a second IGFET (15) as a protection switching element; and a gate resistance (16). The first IGFET (14) is connected between the first and the second main terminals (11, 12). The second IGFET (15) is connected between a drain electrode (D1) and a gate electrode (G1) of the first IGFET (14). A gate electrode (G2) of the second IGFET (15) is connected to a source electrode (S1) of the first IGFET (14). The second IGFET (15) is turned on when a reverse-direction voltage is applied to the first IGFET (14). Thus, the first IGFET (14) as a main switching element is protected.</p> |
