| 摘要 |
PURPOSE: A semiconductor memory device and a layout method thereof are provided to prevent the charge accumulation in a metal line by dispersing the electric charge supplied to the metal line through the junction. CONSTITUTION: A bank(210) comprises a plurality of cell arrays. A metal line mesh(230) corresponds to the bank. A junction part is arranged to be contiguous to the bank. A conductive line is crossed with an extended end part of at least one metal line included in the metal line mesh. The junction part(240) comprises a conductive line. The junction part offers a discharge path in which the electric charge accumulated in the metal line passes through the conductive line. |
