SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD

摘要

A semiconductor laser element 1 according to the present invention includes a window region 23 including a disordered portion formed by diffusion of a group-III vacancy, and a non-window region 24 including an active layer 15 of a quantum well structure, and has the disordered portion formed by providing on the window region 23 a promoting film that absorbs a predetermined atom and promotes the diffusion of group-III vacancy. An impurity that preferentially substitutes a group-V site is doped in a layer near the active layer 15, and a difference between an energy band gap in the window region and an energy band gap in the non-window region is equal to or larger than 50 meV.