发明名称 |
CIRCUIT FOR DRIVING A PERIPHERAL-CIRCUIT VOLTAGE IN A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A peripheral circuit voltage driver circuit is provided to highly integrate a transistor for a burn-in test by offering the high voltage for a burn-in test as the peripheral circuit voltage. CONSTITUTION: A differential amplification circuit(306) outputs a current corresponding to the difference after comparing a reference voltage with a detected voltage. An output unit outputs a voltage by a current outputted from the differential amplification circuit as the peripheral circuit voltage. The output unit(308) detects the peripheral circuit voltage and offers the voltage as the detected voltage. A detected voltage controlling unit transfers the detected voltage to the differential amplification circuit when it is a normal mode. The detected voltage controlling unit(309) offers the detected voltage to a differential amplifying unit after controlling the detected voltage to a lower level than a voltage level of normal mode when it is a test mode. |
申请公布号 |
KR20100052295(A) |
申请公布日期 |
2010.05.19 |
申请号 |
KR20080111250 |
申请日期 |
2008.11.10 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, MIN SEOK |
分类号 |
G11C5/14;G11C7/06;G11C7/08;G11C29/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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