发明名称 CIRCUIT FOR DRIVING A PERIPHERAL-CIRCUIT VOLTAGE IN A SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A peripheral circuit voltage driver circuit is provided to highly integrate a transistor for a burn-in test by offering the high voltage for a burn-in test as the peripheral circuit voltage. CONSTITUTION: A differential amplification circuit(306) outputs a current corresponding to the difference after comparing a reference voltage with a detected voltage. An output unit outputs a voltage by a current outputted from the differential amplification circuit as the peripheral circuit voltage. The output unit(308) detects the peripheral circuit voltage and offers the voltage as the detected voltage. A detected voltage controlling unit transfers the detected voltage to the differential amplification circuit when it is a normal mode. The detected voltage controlling unit(309) offers the detected voltage to a differential amplifying unit after controlling the detected voltage to a lower level than a voltage level of normal mode when it is a test mode.
申请公布号 KR20100052295(A) 申请公布日期 2010.05.19
申请号 KR20080111250 申请日期 2008.11.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, MIN SEOK
分类号 G11C5/14;G11C7/06;G11C7/08;G11C29/00 主分类号 G11C5/14
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