Manufacturing Method for Silicon Single Crystalline Ingot with Enhanced Margin of Perfect Region,申请号KR20070140325-传众专利搜索

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发明名称	Manufacturing Method for Silicon Single Crystalline Ingot with Enhanced Margin of Perfect Region
摘要
申请公布号	KR100958523(B1)	申请公布日期	2010.05.19
申请号	KR20070140325	申请日期	2007.12.28
申请人		发明人
分类号	C30B15/20	主分类号	C30B15/20
代理机构		代理人
主权项
地址

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