P-type field-effect transistor and method of production

摘要

An n-layer (3) is arranged above a substrate (1), which can be GaAs, and a p-layer (4) is arranged on the n-layer. The p-layer is separated by a gate electrode (10) into two separate portions forming source and drain. The gate electrode is insulated from the semiconductor material by a gate dielectric (6). Source/drain contacts (11) are electrically conductively connected with the portions of the p-layer.