| 摘要 |
Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.
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