| 摘要 |
A sense amplifier of a DRAM includes, in series between two terminals of application of a supply voltage, at least one first transistor of a first channel type, and an amplification stage formed of two parallel branches each including a second transistor of the first channel type in series with a transistor of a second channel type. The gates of the transistors of a same branch are connected to the junction point of the transistors of the other branch. Each branch including at least one first additional transistor of the first channel type in parallel with at least each second transistor of the first channel type.
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