发明名称 Phase change memory structures including pillars
摘要 A phase change memory cell has a first electrode, a heater, a phase change material, and a second electrode. The heater is over the first electrode, and the heater includes a pillar. The phase change material is around the heater. The second electrode is electrically coupled to the phase change material. In some embodiments, a method includes forming a electrode layer over a substrate, depositing a first layer, providing nanoclusters over the first layer, and etching the first layer. The first layer comprises one of a group consisting of a heater material and a phase change material. The first layer may be etched using the nanocluster defined pattern to form pillars from the first layer.
申请公布号 US7719039(B2) 申请公布日期 2010.05.18
申请号 US20070864257 申请日期 2007.09.28
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MURALIDHAR RAMACHANDRAN;MERCHANT TUSHAR P.;RAO RAJESH A.
分类号 H01L29/80 主分类号 H01L29/80
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