发明名称 |
Structures and methods for fabricating vertically integrated HBT-FET device |
摘要 |
Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for fabricating the FET on a semi-insulating GaAs substrate; fabricating a highly doped thick GaAs layer serving as the cap layer for the FET and the subcollector layer for the HBT; and producing a second set of epitaxial layers for fabricating the HBT.
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申请公布号 |
US7718486(B2) |
申请公布日期 |
2010.05.18 |
申请号 |
US20060331630 |
申请日期 |
2006.01.13 |
申请人 |
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发明人 |
KRUTKO OLEH;XIE KEZHOU;SHOKRANI MOHSEN;GUPTA ADITYA;GEDZBERG BORIS |
分类号 |
H01L21/8249;H01L27/06;H01L29/739 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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