Semiconductor devices having thin film transistors and methods of fabricating the same

摘要

Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.