| 摘要 |
A protective device in a semiconductor may comprise a substrate of a first conductivity type, an epitaxial layer formed on top of the substrate, a body area formed within the epitaxial layer of a second conductivity type extending from a top surface into the epitaxial layer, a first area of the first conductivity type extending from the top surface into the body area, an isolation area surrounding the first area, a ring area of the first conductivity type surrounding the isolation area, and a coupling structure for connecting the ring area with the substrate.
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